ZGP
磷鍺鋅晶體(ZnGeP2，簡稱ZGP)屬于正單軸晶體。是用于光參量振蕩器(OPO)技術的最常用的非線性晶體之一,ZGP晶體具有有效非線性系數大(deff=75pm/V,是其他常用非線性晶體的數倍或數十倍)，損傷閾值高(>30GW/cm2)，寬的透光波段(0.74~12.4μm)，吸收系數小(2~3μm的吸收系數小于0.04cm-1)，熱導率高(360mW/cm·K)，性能穩定，制作工藝成熟。能生長出大尺寸的晶體等許多優點．是3～5m波段中紅外OPO的理想晶體。
特點
- 非線性系數大
- 透射區域為74 μm至12μm
- 相對損壞閾值高
- 高導熱率
- 透明區域廣泛
- 寬光譜范圍內的相位匹配
物理和化學特性
| 屬性 | 數值 |
| 化學式 | ZnGeP2 |
| 晶體結構 | 四方晶系,42m |
| 晶格參數 | a=b=5.467?, c=12.736? |
| 質量密度 | 4.16 g/cm3 |
| 莫氏硬度 | 5.5 |
| 熔點 | 大約1040°C |
| 導熱系數 | 180 W/m/K |
| 熱膨脹系數 | β‖,5×10-6/K; β⊥,7.8×10-6/K |
| 雙折射 | 正單軸 |
非線性光學性質
| 屬性 | 數值 |
| SHG相位匹配范圍 | 3177 ～10357nm (Type I) |
| NLO系數 | d36=75 ± 8 pm/V |
| Type Ⅰ deeo=d36?sin2θcos2φ | |
| Type Ⅱ doeo =deoo=d36?sinθsin2φ | |
| 損壞閾值 | |
| 在2.79 um | 30 GW/cm2?(150 ps) |
| 在10.6 um? | 1 GW/cm2? (2 ns) |
線性光學性質
| 屬性 | 數值 |
| 透明范圍 | 0.74 – 12 um |
| 吸收系數 | α<0.05cm-1?@2050-2100 nm |
| 折光指數 | ? |
| @ 2.05微米 | no= 3.1478, ne= 3.1891 |
| @ 2.79微米 | no= 3.1333, ne= 3.1744 |
| @ 5.30微米 | no= 3.1136, ne= 3.1547 |
| @ 10.6微米 | no= 3.0729, ne= 3.1143 |
光譜
 |  |
| ZGP傳輸光譜 | ZGP的SHG調諧曲線(eeo型) |
 |  |
| ZGP的OPO調諧曲線在2800nm的泵浦燈下。 | ZGP的OPO調諧曲線在2090nm的泵浦燈下。 |
參考文獻
| [1]? Huang C ,? Wu H ,? Xiao R , et al. High-pressure-assisted synthesis of high-volume ZnGeP 2 polycrystalline[J]. Journal of Crystal Growth, 2018:S0022024818300411. |
| [2]? Liu M ,? Zhao B ,? Chen B , et al. Research of thermodynamic properties of mid-infrared single crystal ZnGeP 2[J]. Materials Science in Semiconductor Processing, 2018:S1369800117325908. |
| [3]? Vasilyeva I G ,? Nikolaev R E ,? Verozubova G A . Nonstoichiometry of ZnGeP2 crystals probed by static tensimetric method[J]. Journal of Solid State Chemistry, 2010, 183(9):2242-2247. |
| [4]? Yue X ,? Xu M ,? Du W , et al. Surface finishing of ZnGeP2 single crystal by diamond tool turning method[J]. Optical Materials, 2017:S0925346716307704. |
| [5] D Yang,? Zhao B ,? Chen B , et al. Impurity phases analysis of ZnGeP2 single crystal grown by Bridgman method[J]. Journal of Alloys & Compounds, 2017, 709:125-128. |
| [6]? Verozubova G A ,? Gribenyukov A I ,? Korotkova V V , et al. ZnGeP2 synthesis and growth from melt[J]. Materials Science and Engineering B, 1997, 48(3):191-197. |
| [7]? Mengyan P W ,? Baker B B ,? Lichti R L , et al. Hyperfine spectroscopy and characterization of muonium in ZnGeP 2[J]. Physica B Condensed Matter, 2009, 404(23-24):5121-5124. |
| [8]? Zhang S R ,? Zhu S F ,? Xie L H , et al. Theoretical study of the structural, elastic and thermodynamic properties of chalcopyrite ZnGeP2[J]. Materials Science in Semiconductor Processing, 2015, 38:41-49. |
| [9]? Lei Z ,? Okunev A O ,? Zhu C , et al. Photoelasticy method for study of structural imperfection of ZnGeP2 crystals[J]. Journal of Crystal Growth, 2016, 450(Complete):34-38. |
| [10]? Tripathy S K ,? Kumar V . Electronic, elastic and optical properties of ZnGeP2 semiconductor under hydrostatic pressures[J]. Materials Science & Engineering B, 2014, 182(1):52-58. |
| [11]? Yang D H ,? Zhao B J ,? Chen B J , et al. Growth of ZnGeP 2 single crystals by modified vertical Bridgman method for nonlinear optical devices[J]. Materials Science in Semiconductor Processing, 2017, 67:147-151. |
| [12]? Vasilyeva I G ,? Demidova M G . Chemical analysis of ZnGeP2 as a new line of research of heterogeneity in bulk crystals[J]. Talanta, 2012, 101(none):187-191. |
| [13] Chaudhary, K A,? K. S , et al. Generation of terahertz from ZnGeP2 crystal and its application to record the time-resolved photoacoustic spectra of nitromethane. |
| [14]? Yang C H ,? Wang M ,? Xia S X , et al. Synthesis and Growth of ZnGeP_2 Crystals. Journal of Synthetic Crystals. |
| [15]? Wang Z ,? Mao M ,? Wu H , et al. Study on annealing of infrared nonlinear optical crystal ZnGeP2[J]. Journal of Crystal Growth, 2012, 359(none):11–14. |
| [16]? Verozubova G A ,? Okunev A O ,? Gribenyukov A I , et al. Growth and defect structure of ZnGeP2 crystals[J]. Journal of Crystal Growth, 2010, 312(8):1122-1126. |
| [17]? Verozubova G A ,? Gribenyukov A I ,? Korotkova V V , et al. Synthesis and growth of ZnGeP 2 crystals for nonlinear optical applications[J]. Journal of Crystal Growth, 2000, 213(s 3–4):334-339. |
| [18]? Fan Q ,? Zhu S ,? Zhao B , et al. Influence of annealing on optical and electrical properties of ZnGeP2 single crystals – ScienceDirect[J]. Journal of Crystal Growth, 2011, 318(1):725-728. |
| [19]? Hofmann D M ,? Romanov N G ,? Gehlhoff W , et al. Optically detected magnetic resonance experiments on native defects in ZnGeP 2[J]. Physica B Condensed Matter, 2003, 340-342(none):978-981. |
| [20]? Verozubova G A ,? Okunev A O ,? Gribenyukov A I . Bulk growth of ZnGeP2 crystals and their study by X-ray topography[J]. Journal of Crystal Growth, 2014, 401(sep.1):782-786. |
| [21]? Wu X X ,? Zheng W C . Research on the EPR parameters and local structure of Cr4+ ion at the tetragonal Ge4+ site in ZnGeP2 crystal[J]. Physica B Physics of Condensed Matter, 2015, 473:72-74. |
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